Infineon OptiMOS™ N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1

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Subtotal (1 pack of 25 units)*

£21.00

(exc. VAT)

£25.25

(inc. VAT)

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25 +£0.84£21.00

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Packaging Options:
RS Stock No.:
827-5120
Mfr. Part No.:
IPD30N08S2L21ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

75 V

Series

OptiMOS™

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

6.22mm

Maximum Operating Temperature

+175 °C

Height

2.41mm

Minimum Operating Temperature

-55 °C

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