Infineon OptiMOS™ N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1

Subtotal (1 tube of 50 units)*

£110.85

(exc. VAT)

£133.00

(inc. VAT)

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Units
Per unit
Per Tube*
50 +£2.217£110.85

*price indicative

RS Stock No.:
145-9275
Mfr. Part No.:
IPP80N08S2L07AKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220

Series

OptiMOS™

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Length

10.36mm

Transistor Material

Si

Typical Gate Charge @ Vgs

183 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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