Infineon OptiMOS™ N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Brand:
- Infineon
Subtotal (1 tube of 500 units)*
£1,827.50
(exc. VAT)
£2,193.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 + | £3.655 | £1,827.50 |
*price indicative
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220 | ||
Series OptiMOS™ | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 183 nC @ 10 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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