Infineon OptiMOS™ N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Brand:
- Infineon
Subtotal (1 tube of 500 units)*
£1,827.50
(exc. VAT)
£2,193.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 + | £3.655 | £1,827.50 |
*price indicative
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | OptiMOS™ | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 75 V | ||
Series OptiMOS™ | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 183 nC @ 10 V | ||
Width 4.57mm | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
- STMicroelectronics STripFET II N-Channel MOSFET 75 V, 3-Pin TO-220 STP75NF75
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB IRFB3607PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin IPAK IRFU3607PBF
- Infineon N-Channel MOSFET 75 V, 3-Pin D2PAK IPB80N08S2L07ATMA1
- onsemi PowerTrench N-Channel MOSFET 75 V, 3-Pin TO-247 FDH038AN08A1
- Infineon HEXFET N-Channel MOSFET 75 V D²Pak IRFS3607TRLPBF
- Infineon N-Channel MOSFET 75 V D2PAK IPB80N08S2L07ATMA1