Infineon OptiMOS™ 2 N-Channel MOSFET, 3.8 A, 20 V, 3-Pin SOT-346 BSR202NL6327HTSA1
- RS Stock No.:
- 826-9386
- Mfr. Part No.:
- BSR202NL6327HTSA1
- Brand:
- Infineon
Subtotal (1 pack of 100 units)*
£15.00
(exc. VAT)
£18.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 100 + | £0.15 | £15.00 |
*price indicative
- RS Stock No.:
- 826-9386
- Mfr. Part No.:
- BSR202NL6327HTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | OptiMOS™ 2 | |
| Package Type | SOT-346 (SC-59) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5.8 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series OptiMOS™ 2 | ||
Package Type SOT-346 (SC-59) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5.8 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon N-Channel MOSFET Transistor 3-Pin PG-SC-59 BSR202NL6327HTSA1
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin SOT-23 DMP2120U-7
- onsemi PowerTrench Dual N-Channel MOSFET 20 V, 6-Pin MicroFET Thin FDME1024NZT
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin SOT-346 DMP2066LSN-7
- ROHM RQ5C060BC P-Channel MOSFET 20 V, 3-Pin SOT-346 RQ5C060BCTCL
- Diodes Inc N-Channel MOSFET 70 V, 3-Pin SOT-223 ZXMN7A11GTA
- Diodes Inc N-Channel MOSFET 30 V, 3-Pin SOT-23 DMN3110S-7
- ROHM N-Channel MOSFET 30 V, 3-Pin SOT-346 RQ5E030AJTCL