Diodes Inc P-Channel MOSFET, 3.8 A, 20 V, 3-Pin SOT-23 DMP2120U-7
- RS Stock No.:
- 182-7215
- Mfr. Part No.:
- DMP2120U-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 100 units)*
£8.10
(exc. VAT)
£9.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 300 unit(s) ready to ship
- Plus 800 unit(s) shipping from 14 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | £0.081 | £8.10 |
| 200 - 400 | £0.071 | £7.10 |
| 500 - 900 | £0.057 | £5.70 |
| 1000 - 1900 | £0.052 | £5.20 |
| 2000 + | £0.047 | £4.70 |
*price indicative
- RS Stock No.:
- 182-7215
- Mfr. Part No.:
- DMP2120U-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.3 nC @ 4.5V | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Width | 1.4mm | |
| Height | 1mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.8 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.3 nC @ 4.5V | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Width 1.4mm | ||
Height 1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
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