Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220TRPBF

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Subtotal (1 tape of 5 units)*

£5.93

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£7.115

(inc. VAT)

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5 - 45£1.186£5.93
50 - 120£1.118£5.59
125 - 245£1.008£5.04
250 - 495£0.948£4.74
500 +£0.89£4.45

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Packaging Options:
RS Stock No.:
812-0654
Mfr. Part No.:
IRFR9220TRPBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Height

2.38mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology
Fast switching
Fully avalanche rated


MOSFET Transistors, Vishay Semiconductor

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