Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF

Subtotal (1 reel of 2000 units)*

£1,130.00

(exc. VAT)

£1,356.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£0.565£1,130.00

*price indicative

RS Stock No.:
177-7562
Mfr. Part No.:
IRFR9214TRPBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.73mm

Number of Elements per Chip

1

Height

2.38mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology
Fast switching
Fully avalanche rated


MOSFET Transistors, Vishay Semiconductor

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