onsemi UniFET N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F FDPF18N50T

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Subtotal (1 pack of 2 units)*

£2.19

(exc. VAT)

£2.628

(inc. VAT)

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  • Final 968 unit(s) shipping from 30 October 2025
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Packaging Options:
RS Stock No.:
806-3595
Mfr. Part No.:
FDPF18N50T
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Series

UniFET

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

38.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.36mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.9mm

Number of Elements per Chip

1

Height

16.07mm

Minimum Operating Temperature

-55 °C

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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