onsemi UniFET N-Channel MOSFET, 100 A, 500 V, 3-Pin TO-264 FDL100N50F

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Subtotal (1 tube of 25 units)*

£203.05

(exc. VAT)

£243.65

(inc. VAT)

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Units
Per unit
Per Tube*
25 +£8.122£203.05

*price indicative

RS Stock No.:
124-1331
Mfr. Part No.:
FDL100N50F
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

500 V

Series

UniFET

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

20mm

Typical Gate Charge @ Vgs

238 nC @ 10 V

Number of Elements per Chip

1

Width

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20mm

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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