Dual P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 onsemi NDC7003P

RS Stock No.:: 806-1236
Mfr. Part No.:: NDC7003P
Brand:: onsemi

Dual P-Channel MOSFET, 340 mA, 60 V, 6-Pin SOT-23 onsemi NDC7003P

2900 In stock - FREE next working day delivery available

Price Each (In a Pack of 20)

£0.357

(exc. VAT)

£0.428

(inc. VAT)

Units	Per unit	Per Pack*
20 - 80	£0.357	£7.14
100 - 480	£0.253	£5.06
500 - 980	£0.208	£4.16
1000 - 2980	£0.168	£3.36
3000 +	£0.143	£2.86

*price indicative

RS Stock No.:: 806-1236
Mfr. Part No.:: NDC7003P
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	340 mA
Maximum Drain Source Voltage	60 V
Series	PowerTrench
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	10 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	960 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	1.7mm
Length	3mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	1.6 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1mm