onsemi PowerTrench Dual N/P-Channel MOSFET, 2 A, 2.5 A, 30 V, 6-Pin SOT-23 FDC6333C
- RS Stock No.:
- 739-0164
- Mfr. Part No.:
- FDC6333C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.03
(exc. VAT)
£3.635
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,315 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.606 | £3.03 |
| 50 - 145 | £0.578 | £2.89 |
| 150 - 745 | £0.482 | £2.41 |
| 750 - 1495 | £0.458 | £2.29 |
| 1500 + | £0.422 | £2.11 |
*price indicative
- RS Stock No.:
- 739-0164
- Mfr. Part No.:
- FDC6333C
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 2 A, 2.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 150 mΩ, 220 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 960 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -25 V, -16 V, +16 V, +25 V | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 4.1 nC @ 10 V, 4.7 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 2 A, 2.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 150 mΩ, 220 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -25 V, -16 V, +16 V, +25 V | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 4.1 nC @ 10 V, 4.7 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Width 1.7mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
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