onsemi PowerTrench Dual P-Channel MOSFET, 1.9 A, 20 V, 6-Pin SOT-23 FDC6306P
- RS Stock No.:
- 166-2972
- Mfr. Part No.:
- FDC6306P
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£516.00
(exc. VAT)
£618.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 08 January 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.172 | £516.00 |
*price indicative
- RS Stock No.:
- 166-2972
- Mfr. Part No.:
- FDC6306P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.9 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 270 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 960 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Typical Gate Charge @ Vgs | 3 nC @ 4.5 V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 3mm | |
Width | 1.7mm | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 960 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 3 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Width 1.7mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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