N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXYS IXFK48N60Q3

RS Stock No.:: 801-1415
Mfr. Part No.:: IXFK48N60Q3
Brand:: IXYS

N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXYS IXFK48N60Q3

Available to back order for despatch 24/03/2025

Price Each

£23.02

(exc. VAT)

£27.62

(inc. VAT)

Units	Per unit
1 +	£23.02

RS Stock No.:: 801-1415
Mfr. Part No.:: IXFK48N60Q3
Brand:: IXYS

Technical Reference

IXFK48N60Q3, IXFX48N60Q3, HiperFET, Power MOSFETs, Q3-Class, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	48 A
Maximum Drain Source Voltage	600 V
Series	HiperFET, Q3-Class
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	5.13mm
Typical Gate Charge @ Vgs	140 nC @ 10 V
Length	19.96mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	26.16mm