STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STD80N4F6
- RS Stock No.:
- 791-9308
- Mfr. Part No.:
- STD80N4F6
- Brand:
- STMicroelectronics
Subtotal (1 pack of 10 units)*
£8.35
(exc. VAT)
£10.02
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 22 January 2026
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £0.835 | £8.35 |
50 - 90 | £0.793 | £7.93 |
100 - 240 | £0.721 | £7.21 |
250 - 490 | £0.702 | £7.02 |
500 + | £0.685 | £6.85 |
*price indicative
- RS Stock No.:
- 791-9308
- Mfr. Part No.:
- STD80N4F6
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 80 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | DPAK (TO-252) | |
Series | DeepGate, STripFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 6 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 70 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.2mm | |
Number of Elements per Chip | 1 | |
Length | 6.6mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 2.4mm | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Series DeepGate, STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
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