STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V, 3-Pin DPAK STD100N10F7
- RS Stock No.:
- 786-3592
- Mfr. Part No.:
- STD100N10F7
- Brand:
- STMicroelectronics
Subtotal (1 pack of 5 units)*
£7.52
(exc. VAT)
£9.025
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,205 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.504 | £7.52 |
*price indicative
- RS Stock No.:
- 786-3592
- Mfr. Part No.:
- STD100N10F7
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET H7 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Width | 6.2mm | |
| Height | 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET H7 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Width 6.2mm | ||
Height 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
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