STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7
- RS Stock No.:
- 792-5697
- Mfr. Part No.:
- STB100N10F7
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.27
(exc. VAT)
£17.125
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.854 | £14.27 |
| 25 - 45 | £2.712 | £13.56 |
| 50 - 120 | £2.44 | £12.20 |
| 125 - 245 | £2.198 | £10.99 |
| 250 + | £2.084 | £10.42 |
*price indicative
- RS Stock No.:
- 792-5697
- Mfr. Part No.:
- STB100N10F7
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET H7 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET H7 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.35mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
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