STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 STP260N6F6
- RS Stock No.:
- 760-9673
- Mfr. Part No.:
- STP260N6F6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£7.15
(exc. VAT)
£8.58
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6 unit(s) ready to ship
- Plus 48 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £7.15 |
| 2 + | £6.79 |
*price indicative
- RS Stock No.:
- 760-9673
- Mfr. Part No.:
- STP260N6F6
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Series | DeepGate, STripFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Series DeepGate, STripFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 183 nC @ 10 V | ||
Length 10.4mm | ||
Height 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
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