STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2

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Packaging Options:
RS Stock No.:
860-7523
Mfr. Part No.:
STH150N10F7-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

117 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.4mm

Transistor Material

Si

Width

10.57mm

Height

4.8mm

Minimum Operating Temperature

-55 °C

N-Channel STripFET™ DeepGate™, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


MOSFET Transistors, STMicroelectronics

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