STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STH150N10F7-2
- RS Stock No.:
- 168-8819
- Mfr. Part No.:
- STH150N10F7-2
- Brand:
- STMicroelectronics
- RS Stock No.:
- 168-8819
- Mfr. Part No.:
- STH150N10F7-2
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 110 A | |
Maximum Drain Source Voltage | 100 V | |
Series | DeepGate, STripFET | |
Package Type | H2PAK-2 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.9 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 10.57mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 117 nC @ 10 V | |
Length | 10.4mm | |
Height | 4.8mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 100 V | ||
Series DeepGate, STripFET | ||
Package Type H2PAK-2 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 10.57mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 117 nC @ 10 V | ||
Length 10.4mm | ||
Height 4.8mm | ||
Minimum Operating Temperature -55 °C | ||
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