Vishay Dual N-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC SQ4920EY-T1_GE3

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Subtotal (1 tape of 5 units)*

£8.09

(exc. VAT)

£9.71

(inc. VAT)

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  • Shipping from 15 May 2026
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Units
Per unit
Per Tape*
5 - 45£1.618£8.09
50 - 120£1.522£7.61
125 - 245£1.372£6.86
250 - 495£1.294£6.47
500 +£1.212£6.06

*price indicative

Packaging Options:
RS Stock No.:
787-9462
Mfr. Part No.:
SQ4920EY-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

4.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

19.7 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Dual N-Channel MOSFET, Vishay Semiconductor



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