Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Brand:
- Vishay
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View bulk pricing optionsSubtotal (1 tape of 10 units)*
£5.01
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In Stock
- 1,980 unit(s) ready to ship
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Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.501 | £5.01 |
| 100 - 490 | £0.476 | £4.76 |
| 500 - 990 | £0.426 | £4.26 |
| 1000 - 2490 | £0.31 | £3.10 |
| 2500 + | £0.281 | £2.81 |
*price indicative
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.76V | |
| Typical Gate Charge Qg @ Vgs | 19.4nC | |
| Maximum Power Dissipation Pd | 31.2W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.76V | ||
Typical Gate Charge Qg @ Vgs 19.4nC | ||
Maximum Power Dissipation Pd 31.2W | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
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