Vishay TrenchFET N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 SIRA14DP-T1-GE3
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Brand:
- Vishay
Subtotal (1 tape of 10 units)*
£4.92
(exc. VAT)
£5.90
(inc. VAT)
FREE delivery for orders over £50.00
- 2,000 unit(s) ready to ship
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.492 | £4.92 |
| 100 - 490 | £0.467 | £4.67 |
| 500 - 990 | £0.418 | £4.18 |
| 1000 - 2490 | £0.305 | £3.05 |
| 2500 + | £0.276 | £2.76 |
*price indicative
- RS Stock No.:
- 787-9389
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 58 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 31.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Transistor Material | Si | |
| Width | 5.26mm | |
| Number of Elements per Chip | 1 | |
| Length | 6.25mm | |
| Typical Gate Charge @ Vgs | 19.4 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.12mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 58 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 31.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Transistor Material Si | ||
Width 5.26mm | ||
Number of Elements per Chip 1 | ||
Length 6.25mm | ||
Typical Gate Charge @ Vgs 19.4 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.12mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
Related links
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8 SIRA14DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V, 8-Pin PowerPAK 1212-8 SiS178LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V, 8-Pin PowerPAK 1212-8 SiS176LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISA10DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8SH SiSH892BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISA04DN-T1-GE3
