Vishay TrenchFET Dual N-Channel MOSFET, 18.7 A, 100 V, 8-Pin SO-8 Si4090BDY-T1-GE3
- RS Stock No.:
- 228-2820
- Mfr. Part No.:
- Si4090BDY-T1-GE3
- Brand:
- Vishay
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 228-2820
- Mfr. Part No.:
- Si4090BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 18.7 A | |
Maximum Drain Source Voltage | 100 V | |
Series | TrenchFET | |
Package Type | SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.01 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 18.7 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.01 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
100 % Rg and UIS tested
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