Vishay TrenchFET Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 SIRA20BDP-T1-GE3
- RS Stock No.:
- 228-2915
- Mfr. Part No.:
- SIRA20BDP-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,557.00
(exc. VAT)
£1,869.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.519 | £1,557.00 |
*price indicative
- RS Stock No.:
- 228-2915
- Mfr. Part No.:
- SIRA20BDP-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 335 A | |
Maximum Drain Source Voltage | 25 V | |
Package Type | PowerPAK SO-8 | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.00058 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.1V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 335 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.00058 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
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