Vishay TrenchFET Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 SIRA20BDP-T1-GE3

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Subtotal (1 pack of 5 units)*

£8.60

(exc. VAT)

£10.30

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£1.72£8.60
50 - 120£1.55£7.75
125 - 245£1.206£6.03
250 - 495£1.068£5.34
500 +£0.98£4.90

*price indicative

Packaging Options:
RS Stock No.:
228-2916
Mfr. Part No.:
SIRA20BDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

335 A

Maximum Drain Source Voltage

25 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00058 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Number of Elements per Chip

2

Transistor Material

Si

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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