Vishay TrenchFET Type N-Channel MOSFET, 201 A, 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
228-2890
Mfr. Part No.:
SiJA22DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.74mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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