Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

13 nC @ 10 V

Length

5mm

Transistor Material

Si

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm