Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI9945BDY-T1-GE3

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
787-8995
Distrelec Article No.:
304-02-278
Mfr. Part No.:
SI9945BDY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Distrelec Product Id

30402278

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links