Vishay Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC SI9945BDY-T1-GE3

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Subtotal (1 pack of 10 units)*

£9.04

(exc. VAT)

£10.85

(inc. VAT)

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Being discontinued
  • Final 90 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90£0.904£9.04
100 - 240£0.85£8.50
250 - 490£0.769£7.69
500 - 990£0.723£7.23
1000 +£0.68£6.80

*price indicative

Packaging Options:
RS Stock No.:
787-8995
Distrelec Article No.:
304-02-278
Mfr. Part No.:
SI9945BDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

13 nC @ 10 V

Transistor Material

Si

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Dual N-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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