Infineon HEXFET N-Channel MOSFET, 3.4 A, 30 V, 3-Pin SOT-23 IRLML6346TRPBF
- RS Stock No.:
- 737-7234
- Mfr. Part No.:
- IRLML6346TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£4.06
(exc. VAT)
£4.88
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 20 unit(s) ready to ship from another location
- Plus 5,800 unit(s) shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.203 | £4.06 |
| 200 - 480 | £0.108 | £2.16 |
| 500 - 980 | £0.10 | £2.00 |
| 1000 - 1980 | £0.094 | £1.88 |
| 2000 + | £0.088 | £1.76 |
*price indicative
- RS Stock No.:
- 737-7234
- Mfr. Part No.:
- IRLML6346TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 2.9 nC @ 4.5 V | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 2.9 nC @ 4.5 V | ||
Width 1.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
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