Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF
- RS Stock No.:
- 737-7225
- Mfr. Part No.:
- IRLML6344TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£3.80
(exc. VAT)
£4.60
(inc. VAT)
FREE delivery for orders over £50.00
- 4,160 unit(s) ready to ship
- Plus 560 unit(s) ready to ship from another location
- Plus 50,120 unit(s) shipping from 07 November 2025
| Units | Per unit | Per Pack* | 
|---|---|---|
| 20 - 180 | £0.19 | £3.80 | 
| 200 - 480 | £0.129 | £2.58 | 
| 500 - 980 | £0.121 | £2.42 | 
| 1000 - 1980 | £0.114 | £2.28 | 
| 2000 + | £0.105 | £2.10 | 
*price indicative
- RS Stock No.:
- 737-7225
- Mfr. Part No.:
- IRLML6344TRPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 37 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 6.8 nC @ 4.5 V | |
| Width | 1.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 5 A | ||
| Maximum Drain Source Voltage 30 V | ||
| Series HEXFET | ||
| Package Type SOT-23 | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 37 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 1.1V | ||
| Minimum Gate Threshold Voltage 0.5V | ||
| Maximum Power Dissipation 1.3 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -12 V, +12 V | ||
| Typical Gate Charge @ Vgs 6.8 nC @ 4.5 V | ||
| Width 1.4mm | ||
| Maximum Operating Temperature +150 °C | ||
| Length 3.04mm | ||
| Number of Elements per Chip 1 | ||
| Transistor Material Si | ||
| Minimum Operating Temperature -55 °C | ||
| Height 1.02mm | ||
| Forward Diode Voltage 1.2V | ||
Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF
Features & Benefits
• Maximum drain-source voltage of 30V supports various requirements
• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses
• Wide gate threshold voltage range enables flexible operation
• Efficient power dissipation capability of 1.3W enhances reliability
Applications
• Used in power management solutions for automotive
• Effective in DC-DC converters for efficient energy conversion
• Suitable for battery management systems to improve performance
• Effective in motor control circuits for automation tasks
What is the significance of the low RDS(on) value?
What voltage range can be applied to the gate-source junction?
How does the device perform under high temperatures?
What benefits does the surface mount design provide?
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