Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

RS Stock No.:: 737-7225
Mfr. Part No.:: IRLML6344TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£4.50

(exc. VAT)

£5.40

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,180 unit(s) ready to ship
Plus 480 unit(s) ready to ship from another location
Plus 45,380 unit(s) shipping from 02 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 180	£0.225	£4.50
200 - 480	£0.153	£3.06
500 - 980	£0.144	£2.88
1000 - 1980	£0.135	£2.70
2000 +	£0.124	£2.48

*price indicative

RS Stock No.:: 737-7225
Mfr. Part No.:: IRLML6344TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	1.3W
	Typical Gate Charge Qg @ Vgs	6.8nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Distrelec Product Id	304-45-318
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 1.3W
	Typical Gate Charge Qg @ Vgs 6.8nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Distrelec Product Id 304-45-318
	Automotive Standard No

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF

This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits

• Offers a continuous drain current of 5A for robust performance

• Maximum drain-source voltage of 30V supports various requirements

• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses

• Wide gate threshold voltage range enables flexible operation

• Efficient power dissipation capability of 1.3W enhances reliability

Applications

• Ideal for microcontroller load switching in electronic systems

• Used in power management solutions for automotive

• Effective in DC-DC converters for efficient energy conversion

• Suitable for battery management systems to improve performance

• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?

The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?

The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?

With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.