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Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

RS Stock No.:: 737-7225
Mfr. Part No.:: IRLML6344TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 IRLML6344TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£3.80

(exc. VAT)

£4.60

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

4,220 unit(s) ready to ship
Plus 600 unit(s) ready to ship from another location
Plus 50,140 unit(s) shipping from 08 October 2025

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Units	Per unit	Per Pack*
20 - 180	£0.19	£3.80
200 - 480	£0.129	£2.58
500 - 980	£0.121	£2.42
1000 - 1980	£0.114	£2.28
2000 +	£0.105	£2.10

*price indicative

RS Stock No.:: 737-7225
Mfr. Part No.:: IRLML6344TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	5 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	37 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.1V
	Minimum Gate Threshold Voltage	0.5V
	Maximum Power Dissipation	1.3 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-12 V, +12 V
	Width	1.4mm
	Length	3.04mm
	Typical Gate Charge @ Vgs	6.8 nC @ 4.5 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	1.02mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 5 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 37 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.1V
	Minimum Gate Threshold Voltage 0.5V
	Maximum Power Dissipation 1.3 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -12 V, +12 V
	Width 1.4mm
	Length 3.04mm
	Typical Gate Charge @ Vgs 6.8 nC @ 4.5 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 1.02mm

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF

This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits

• Offers a continuous drain current of 5A for robust performance
• Maximum drain-source voltage of 30V supports various requirements
• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses
• Wide gate threshold voltage range enables flexible operation
• Efficient power dissipation capability of 1.3W enhances reliability

Applications

• Ideal for microcontroller load switching in electronic systems
• Used in power management solutions for automotive
• Effective in DC-DC converters for efficient energy conversion
• Suitable for battery management systems to improve performance
• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?

The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?

The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?

With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.

What benefits does the surface mount design provide?

The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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