Infineon HEXFET N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB IRFB3306PBF
- RS Stock No.:
- 688-6910
- Mfr. Part No.:
- IRFB3306PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£3.20
(exc. VAT)
£3.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 278 unit(s) ready to ship
- Plus 24 unit(s) ready to ship from another location
- Plus 2,174 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 24 | £1.60 | £3.20 |
| 26 + | £1.32 | £2.64 |
*price indicative
- RS Stock No.:
- 688-6910
- Mfr. Part No.:
- IRFB3306PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.82mm | |
| Length | 10.66mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Length 10.66mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3306PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-247AC IRFP3306PBF
- Infineon HEXFET N-Channel MOSFET 60 V D2-Pak IRFS3306TRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin D2PAK AUIRFS3306TRL
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFS3306PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRLB3036PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3006PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRF1018EPBF