Infineon HEXFET N-Channel MOSFET, 353 A, 24 V, 3-Pin TO-220AB IRF1324PBF
- RS Stock No.:
- 688-6807
- Mfr. Part No.:
- IRF1324PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.18
(exc. VAT)
£5.02
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 378 left, ready to ship
- Plus 4 left, ready to ship from another location
- Final 400 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.09 | £4.18 |
| 20 - 48 | £1.36 | £2.72 |
| 50 - 98 | £1.25 | £2.50 |
| 100 - 198 | £1.15 | £2.30 |
| 200 + | £0.975 | £1.95 |
*price indicative
- RS Stock No.:
- 688-6807
- Mfr. Part No.:
- IRF1324PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 353 A | |
| Maximum Drain Source Voltage | 24 V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.83mm | |
| Height | 9.02mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 353 A | ||
Maximum Drain Source Voltage 24 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Height 9.02mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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