Infineon HEXFETPower MOSFET Type N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF

Subtotal (1 pack of 2 units)*

£1.78

(exc. VAT)

£2.14

(inc. VAT)

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  • Plus 372 unit(s) shipping from 05 January 2026
  • Final 400 unit(s) shipping from 12 January 2026
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Per Pack*
2 +£0.89£1.78

*price indicative

RS Stock No.:
688-6807
Mfr. Part No.:
IRF1324PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

353A

Maximum Drain Source Voltage Vds

24V

Series

HEXFETPower MOSFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Maximum Operating Temperature

175°C

Height

9.02mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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