onsemi UniFET N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

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Subtotal (1 pack of 5 units)*

£10.41

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£12.49

(inc. VAT)

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  • 5 unit(s) shipping from 09 October 2025
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5 - 45£2.082£10.41
50 - 95£1.736£8.68
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presentation
N-Channel MOSFET Transistor, 75 A, 60 V, 3-Pin TO-220AB Vishay SUP75N06-08-E3
RS Stock No.
708-5162

Each (In a Pack of 5)

£1.846

(exc. VAT)

£2.215

(inc. VAT)

RS Stock No.:
671-4862
Mfr. Part No.:
FDP75N08A
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Series

UniFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

137 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.83mm

Length

10.67mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.4mm

COO (Country of Origin):
MY

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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