N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB onsemi FQP6N40C

RS Stock No.:: 671-5168
Mfr. Part No.:: FQP6N40C
Brand:: onsemi

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB onsemi FQP6N40C

Price Each (In a Pack of 5)

£1.036

(exc. VAT)

£1.243

(inc. VAT)

Units	Per unit	Per Pack*
5 - 5	£1.036	£5.18
10 - 95	£0.828	£4.14
100 - 245	£0.672	£3.36
250 - 495	£0.652	£3.26
500 +	£0.564	£2.82

*price indicative

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

RS Stock No.:: 671-5168
Mfr. Part No.:: FQP6N40C
Brand:: onsemi

Technical Reference

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	400 V
Series	QFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	73 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.7mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.1mm
Typical Gate Charge @ Vgs	16 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.4mm