Vishay D Series N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3
- RS Stock No.:
- 145-1660
- Mfr. Part No.:
- SIHP6N40D-GE3
- Brand:
- Vishay
Save 30% when you buy 250 units
Subtotal (1 tube of 50 units)*
£22.80
(exc. VAT)
£27.35
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 300 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.456 | £22.80 |
| 100 - 200 | £0.36 | £18.00 |
| 250 + | £0.319 | £15.95 |
*price indicative
- RS Stock No.:
- 145-1660
- Mfr. Part No.:
- SIHP6N40D-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | TO-220AB | |
| Series | D Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.51mm | |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.01mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-220AB | ||
Series D Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Width 4.65mm | ||
Maximum Operating Temperature +150 °C | ||
Length 10.51mm | ||
Typical Gate Charge @ Vgs 9 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.01mm | ||
Minimum Operating Temperature -55 °C | ||
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