onsemi QFET N-Channel MOSFET, 21 A, 300 V, 3-Pin TO-220AB FQP22N30

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Subtotal (1 pack of 5 units)*

£12.33

(exc. VAT)

£14.795

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£2.466£12.33
50 - 95£2.018£10.09
100 - 245£1.85£9.25
250 - 495£1.746£8.73
500 +£1.698£8.49

*price indicative

Packaging Options:
RS Stock No.:
671-5058
Mfr. Part No.:
FQP22N30
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

300 V

Package Type

TO-220AB

Series

QFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

47 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.4mm

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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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