onsemi 2N7000 N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000
- RS Stock No.:
- 671-4733
- Distrelec Article No.:
- 304-43-722
- Mfr. Part No.:
- 2N7000
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
£8.42
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In Stock
- 1,240 unit(s) ready to ship from another location
- Plus 7,340 unit(s) shipping from 13 November 2026
- Plus 2,220 unit(s) shipping from 19 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 180 | £0.421 | £8.42 | - |
| 200 - 480 | £0.379 | £7.58 | 9% |
| 500 + | £0.337 | £6.74 | 19% |
*price indicative
- RS Stock No.:
- 671-4733
- Distrelec Article No.:
- 304-43-722
- Mfr. Part No.:
- 2N7000
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 880mV | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Width | 4.19mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 880mV | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.2mm | ||
Height 5.33mm | ||
Width 4.19mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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