onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000
- RS Stock No.:
- 671-4733
- Distrelec Article No.:
- 304-43-722
- Mfr. Part No.:
- 2N7000
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)*
£5.26
(exc. VAT)
£6.32
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,340 unit(s) ready to ship
- Plus 1,360 unit(s) ready to ship from another location
- Plus 7,440 unit(s) shipping from 20 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.263 | £5.26 |
| 200 - 480 | £0.227 | £4.54 |
| 500 - 980 | £0.196 | £3.92 |
| 1000 - 1980 | £0.173 | £3.46 |
| 2000 + | £0.157 | £3.14 |
*price indicative
- RS Stock No.:
- 671-4733
- Distrelec Article No.:
- 304-43-722
- Mfr. Part No.:
- 2N7000
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.88V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 400mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.19 mm | |
| Length | 5.2mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.88V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 400mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.19 mm | ||
Length 5.2mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
Advanced Power MOSFET, Fairchild Semiconductor
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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