onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z
- RS Stock No.:
- 184-4156
- Mfr. Part No.:
- 2N7000-D26Z
- Brand:
- onsemi
Bulk discount available
Subtotal (1 reel of 2000 units)*
£152.00
(exc. VAT)
£182.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | £0.076 | £152.00 |
| 6000 - 8000 | £0.074 | £148.00 |
| 10000 + | £0.072 | £144.00 |
*price indicative
- RS Stock No.:
- 184-4156
- Mfr. Part No.:
- 2N7000-D26Z
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 400 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 5.2mm | |
| Width | 4.19mm | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 5.2mm | ||
Width 4.19mm | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
- COO (Country of Origin):
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
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