onsemi N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 2N7000-D26Z

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£16.90

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£20.30

(inc. VAT)

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  • 500 unit(s) ready to ship
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100 - 400£0.169£16.90
500 - 900£0.146£14.60
1000 +£0.126£12.60

*price indicative

Packaging Options:
RS Stock No.:
184-4881
Mfr. Part No.:
2N7000-D26Z
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

5.2mm

Width

4.19mm

Number of Elements per Chip

1

Forward Diode Voltage

1.5V

Height

5.33mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.

Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications

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