onsemi NDS332 Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 NDS332P

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Subtotal (1 pack of 10 units)*

£3.41

(exc. VAT)

£4.09

(inc. VAT)

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Per Pack*
10 - 40£0.341£3.41
50 - 90£0.175£1.75
100 - 240£0.135£1.35
250 - 490£0.121£1.21
500 +£0.118£1.18

*price indicative

Packaging Options:
RS Stock No.:
671-1087
Mfr. Part No.:
NDS332P
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

20V

Series

NDS332

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.7nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Length

2.92mm

Width

1.4 mm

Standards/Approvals

No

Height

0.94mm

Distrelec Product Id

304-43-739

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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