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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	1 A
	Maximum Drain Source Voltage	20 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	180 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.3V
	Maximum Power Dissipation	400 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	1.4mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	2.5 nC @ 5 V
	Length	3.04mm
	Height	1.01mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 1 A
	Maximum Drain Source Voltage 20 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 180 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.3V
	Maximum Power Dissipation 400 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 1.4mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 2.5 nC @ 5 V
	Length 3.04mm
	Height 1.01mm
	Minimum Operating Temperature -55 °C

P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NVR1P02T1G

FREE delivery for orders over £50.00

P-Channel Power MOSFET, 20V, ON Semiconductor

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