onsemi PowerTrench P-Channel MOSFET, 800 mA, 150 V, 3-Pin SOT-23 FDN86265P

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£16.225

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£19.475

(inc. VAT)

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25 - 75£0.649£16.23
100 - 225£0.559£13.98
250 +£0.485£12.13

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Packaging Options:
RS Stock No.:
864-8512
Mfr. Part No.:
FDN86265P
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

800 mA

Maximum Drain Source Voltage

150 V

Series

PowerTrench

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

1.4mm

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Length

2.92mm

Number of Elements per Chip

1

Height

0.94mm

Minimum Operating Temperature

-55 °C

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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