Name: Fairchild QFET N-Channel MOSFET Transistor, 7.8 A, 200 V, 3-Pin DPAK FQD10N20CTM
Brand: Fairchild Semiconductor
SKU: 671-0936
Price: 0.62 GBP
Availability: Discontinued

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	Fairchild Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	7.8 A
	Maximum Drain Source Voltage	200 V
	Package Type	DPAK
	Series	QFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	360 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	50 W
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Length	6.6mm
	Number of Elements per Chip	1
	Width	6.1mm
	Typical Gate Charge @ Vgs	20 nC @ 10 V
	Height	2.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Fairchild Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 7.8 A
	Maximum Drain Source Voltage 200 V
	Package Type DPAK
	Series QFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 360 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 50 W
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Length 6.6mm
	Number of Elements per Chip 1
	Width 6.1mm
	Typical Gate Charge @ Vgs 20 nC @ 10 V
	Height 2.3mm
	Minimum Operating Temperature -55 °C

Fairchild QFET N-Channel MOSFET Transistor, 7.8 A, 200 V, 3-Pin DPAK FQD10N20CTM

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Related links

Be the first to know about our latest products and services