Vishay P-Channel MOSFET Transistor, 2.2 A, 20 V, 3-Pin SOT-23 SI2301BDS-T1-E3
- RS Stock No.:
- 710-4660
- Mfr. Part No.:
- SI2301BDS-T1-E3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 710-4660
- Mfr. Part No.:
- SI2301BDS-T1-E3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 2.2 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 100 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.45V | |
Maximum Power Dissipation | 700 mW | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 4.5 nC @ 4.5 V | |
Width | 1.4mm | |
Length | 3.04mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.02mm | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 700 mW | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 4.5 nC @ 4.5 V | ||
Width 1.4mm | ||
Length 3.04mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
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