onsemi PowerTrench N-Channel MOSFET, 8.9 A, 80 V, 8-Pin SOIC FDS3572
- RS Stock No.:
- 671-0485
- Mfr. Part No.:
- FDS3572
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 671-0485
- Mfr. Part No.:
- FDS3572
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8.9 A | |
Maximum Drain Source Voltage | 80 V | |
Package Type | SOIC | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 16 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 5mm | |
Transistor Material | Si | |
Width | 4mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.9 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Transistor Material Si | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin SOIC FDS3572
- Vishay N-Channel MOSFET 80 V PowerPAIR 3 x 3S SIZ260DT-T1-GE3
- onsemi PowerTrench Dual N-Channel MOSFET 80 V, 8-Pin SOIC FDS3890
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86300
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86300DC
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86322
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86350
- onsemi PowerTrench N-Channel MOSFET 80 V, 8-Pin PQFN8 FDMS86300