onsemi PowerTrench N-Channel MOSFET, 10.2 A, 30 V, 8-Pin SOIC FDS8878
- RS Stock No.:
- 166-2620
- Mfr. Part No.:
- FDS8878
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£425.00
(exc. VAT)
£500.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 23 January 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.17 | £425.00 |
*price indicative
- RS Stock No.:
- 166-2620
- Mfr. Part No.:
- FDS8878
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 10.2 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 14 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Width | 4mm | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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