onsemi PowerTrench N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC FDS5672
- RS Stock No.:
- 124-1710
- Mfr. Part No.:
- FDS5672
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,600.00
(exc. VAT)
£1,925.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 13 November 2026
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.64 | £1,600.00 |
*price indicative
- RS Stock No.:
- 124-1710
- Mfr. Part No.:
- FDS5672
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Voltage | 60 V | |
Series | PowerTrench | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 10 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Width | 4mm | |
Transistor Material | Si | |
Length | 5mm | |
Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Transistor Material Si | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench N-Channel MOSFET 60 V, 8-Pin SOIC FDS5672
- onsemi PowerTrench N-Channel MOSFET 60 V, 8-Pin SOIC FDS86540
- onsemi PowerTrench N-Channel MOSFET 60 V, 8-Pin SOIC FDS5351
- onsemi PowerTrench N-Channel MOSFET 60 V, 8-Pin SOIC FDS5670
- onsemi PowerTrench N-Channel MOSFET 40 V, 8-Pin SOIC FDS4480
- onsemi PowerTrench N-Channel MOSFET 100 V, 8-Pin SOIC FDS86106
- onsemi PowerTrench N-Channel MOSFET 150 V, 8-Pin SOIC FDS86252
- onsemi PowerTrench N-Channel MOSFET 40 V, 8-Pin SOIC FDS8638