onsemi QFET P-Channel MOSFET, 1.8 A, 150 V, 8-Pin MLPAK33 FDMC2523P
- RS Stock No.:
- 671-0387
- Mfr. Part No.:
- FDMC2523P
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.44
(exc. VAT)
£6.53
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 11,365 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.088 | £5.44 |
| 50 - 95 | £0.938 | £4.69 |
| 100 - 495 | £0.812 | £4.06 |
| 500 - 995 | £0.714 | £3.57 |
| 1000 + | £0.65 | £3.25 |
*price indicative
- RS Stock No.:
- 671-0387
- Mfr. Part No.:
- FDMC2523P
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | QFET | |
| Package Type | MLPAK33 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.6 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Typical Gate Charge @ Vgs | 6.2 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 3mm | |
| Transistor Material | Si | |
| Height | 0.95mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 150 V | ||
Series QFET | ||
Package Type MLPAK33 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.6 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Typical Gate Charge @ Vgs 6.2 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 3mm | ||
Transistor Material Si | ||
Height 0.95mm | ||
Minimum Operating Temperature -55 °C | ||
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