onsemi QFET P-Channel MOSFET, 1.8 A, 150 V, 8-Pin MLP8 FDMC2523P

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Subtotal (1 reel of 3000 units)*

£1,638.00

(exc. VAT)

£1,965.00

(inc. VAT)

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3000 +£0.546£1,638.00

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RS Stock No.:
124-1700
Mfr. Part No.:
FDMC2523P
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

150 V

Series

QFET

Package Type

MLP8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.6 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

6.2 nC @ 10 V

Length

3mm

Number of Elements per Chip

1

Width

3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.95mm

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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