onsemi PowerTrench Dual N/P-Channel MOSFET, 3.1 A, 3.7 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA1032CZ
- RS Stock No.:
- 671-0374
- Mfr. Part No.:
- FDMA1032CZ
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.90
(exc. VAT)
£5.90
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 3,000 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.98 | £4.90 |
| 50 - 95 | £0.846 | £4.23 |
| 100 - 495 | £0.732 | £3.66 |
| 500 - 995 | £0.644 | £3.22 |
| 1000 + | £0.586 | £2.93 |
*price indicative
- RS Stock No.:
- 671-0374
- Mfr. Part No.:
- FDMA1032CZ
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3.1 A, 3.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | MicroFET 2 x 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 68 mΩ, 95 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 4 nC @ 4.5 V, 7 nC @ 4.5 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2mm | |
| Length | 2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 3.1 A, 3.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type MicroFET 2 x 2 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 68 mΩ, 95 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 4 nC @ 4.5 V, 7 nC @ 4.5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Width 2mm | ||
Length 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
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