onsemi SuperFET N-Channel MOSFET, 11 A, 600 V, 3-Pin D2PAK FCB11N60TM

Bulk discount available

Subtotal (1 unit)*

£3.12

(exc. VAT)

£3.74

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 584 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£3.12
10 - 99£2.69
100 - 499£2.33
500 +£2.05

*price indicative

Packaging Options:

Alternative

This product is not currently available. Here is our alternative recommendation.

Each (On a Reel of 800)

£1.298

(exc. VAT)

£1.558

(inc. VAT)

RS Stock No.:
671-0337
Mfr. Part No.:
FCB11N60TM
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Series

SuperFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.67mm

Number of Elements per Chip

1

Width

9.65mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Height

4.83mm

Minimum Operating Temperature

-55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links