onsemi SuperFET N-Channel MOSFET, 11 A, 600 V, 3-Pin D2PAK FCB11N60TM
- RS Stock No.:
- 671-0337
- Mfr. Part No.:
- FCB11N60TM
- Brand:
- onsemi
Subtotal (1 unit)*
£3.12
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£3.74
(inc. VAT)
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- 584 unit(s) ready to ship
Units | Per unit |
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10 - 99 | £2.69 |
100 - 499 | £2.33 |
500 + | £2.05 |
*price indicative
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Each (On a Reel of 800)
£1.298
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£1.558
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- RS Stock No.:
- 671-0337
- Mfr. Part No.:
- FCB11N60TM
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 600 V | |
Series | SuperFET | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 380 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Width | 9.65mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 600 V | ||
Series SuperFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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