Vishay IRFB11N50A Type N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF
- RS Stock No.:
- 541-1944
- Mfr. Part No.:
- IRFB11N50APBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
£2.33
(exc. VAT)
£2.80
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 137 unit(s) shipping from 03 August 2026
- Plus 219 unit(s) shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £2.33 |
| 10 - 49 | £2.25 |
| 50 - 99 | £2.17 |
| 100 - 249 | £2.05 |
| 250 + | £1.94 |
*price indicative
- RS Stock No.:
- 541-1944
- Mfr. Part No.:
- IRFB11N50APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFB11N50A | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 520mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFB11N50A | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 520mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRFB11N50A Series Power MOSFET, 500V Maximum Drain Source Voltage, 11A Maximum Continuous Drain Current - IRFB11N50APBF
This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial systems. It operates as an enhancement-mode transistor for managing high-voltage loads and is mounted through the PCB using a TO-220AB through-hole package for straightforward heatsinking and assembly.
Features and Benefits:
• 500V maximum drain-source voltage enables high-voltage switching
• 11A continuous drain current supports moderate load currents
• 520mΩ Rds(on) reduces conduction losses in low-duty circuits
• 170W power dissipation allows substantial thermal handling
• 52nC typical gate charge facilitates predictable switching dynamics
• 150°C maximum operating temperature sustains elevated thermal environments
• 11A continuous drain current supports moderate load currents
• 520mΩ Rds(on) reduces conduction losses in low-duty circuits
• 170W power dissipation allows substantial thermal handling
• 52nC typical gate charge facilitates predictable switching dynamics
• 150°C maximum operating temperature sustains elevated thermal environments
Applications
• Suitable for SMPS primary-side switching in power supplies
• Ideal for inverter-stage switching in motor drives
• Used for high-voltage DC-DC conversion modules
• Can be used for industrial relay and contactor drive circuits
• Ideal for inverter-stage switching in motor drives
• Used for high-voltage DC-DC conversion modules
• Can be used for industrial relay and contactor drive circuits
What gate drive limits should I observe for safe operation?
Drive the gate within ±30V to avoid exceeding the maximum gate-source rating and ensure reliable switching.
How does thermal management affect performance under continuous load?
Attach a heatsink to the TO-220AB tab to keep junction temperature below maximum limits and maintain the stated power dissipation capability.
What ambient range is supported for deployment in industrial sites?
The device tolerates operating temperatures down to -55°C and up to 150°C for use across wide environmental conditions.
How does the package style influence mounting and serviceability?
The through-hole TO-220AB format permits secure mechanical mounting and straightforward replacement during maintenance.
Related links
- Vishay IRFB11N50A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB
- Vishay Single Type N-Channel Power MOSFET 500 V TO-263 IRFS11N50APBF
- Vishay Single Type N-Channel Power MOSFET 500 V TO-263
- STMicroelectronics MDmesh M5 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP STF15N65M5
- STMicroelectronics MDmesh M5 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP
- Vishay IRF840 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF840A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840APBF
- Vishay IRF820 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF820PBF